maximum ratings and electrical characteristics for capacitive load, derate current by 20%. single phase, half wave, 60hz, resistive or inductive load. rating at 25 o c ambient temperature unless otherwise specified. notes : -55 to +150 symbol v rrm v rms v dc if (av) i fsm v f i r trr c j t j , t stg 200 140 200 400 280 400 600 420 600 10.0 10.0 100 1.3 1.7 0.98 35 250 65 2.2 unit v v v v a a ua ua o c pf o cw ns maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified peak forward surge current, 8.3ms single maximum instantaneous forward voltage maximum dc reverse current @t j =25 o c typical junction capacitance (note 2) operating junction and storage current t c =100 o c half sine-wave superimposed on rated load (jedec method) @ 5.0 a at rated dc blocking voltage @t j =125 o c maximum reverse recovery time (note 1) typical thermal resistance (note 3) features ? l o w forward voltage drop ? fast switching for high efficiency ? high current capability ? case:ito-220ab isolated/insulated ? high surge current capability ? weight: 2.2 gram approximately ? polarity:as marked on diode body method 208 ? mounting position: any ? terminals: solderable per mil-std-202 mechanical data ? low reverse leakage current r jc temperature range (1) reverse recovery test conditions i f = 0.5a, i r = 1.0a, irr = 0.25a. (2) measured at 1.0 mhz and applied reverse voltage of 4.0 volts dc. (3) thermal resistance junction to case. ? epoxy: ul 94v-0 rate flame retardant unit : inch (mm) ? MURF1020CTR thru murf1060ctr ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 pb free plating product MURF1020CTR thru murf1060ctr pb 10.0 ampere insulated common anode ultra fast recovery rectifier positive negative doubler common cathode case case case common anode suffix "ctr" suffix "ctd" suffix "ct" murf1020ct MURF1020CTR murf1020ctd murf1040ct murf1040ctr murf1040ctd ito-220ab .189(4.8) .406(10.3) .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .112(2.85) .272(6.9) .606(15.4) .543(13.8) .161(4.1)max .134(3.4) .165(4.2) .381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) max .100(2.55) .248(6.3) .583(14.8) .512(13.0) .118(3.0) murf1060ct murf1060ctr murf1060ctd
fig.1 - forward current derating curve fig.3 - typical instantaneous forward characteristics average forward rectified current, amperes 10 6 4 2 8 iinstantaneous forward current, amperes 1 10 100 0.1 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 0 0 50 100 150 case temperature, o c instantaneous forward voltage, volts fig.2 - maximum non-repetitive peak forward surge current peak forward surge current, amperes number of cycles at 60hz 0 20 40 60 80 100 1 10 100 fig.4 - typical reverse characteristics percent of rated peak reverse voltage,% instantaneous reverse current, microamperes 0.1 0 1 10 1000 100 20 40 60 80 100 fig.5 - typical junction capacitance reverse voltage, volts 0.1 10 junction capacitance, pf 1000 1.0 4.0 10 100 100 60 hz resistive or inductive load pulse width 8.3ms single half-sire-wave (jedec method) t j =25 o c pulse width=300us 1% duty cycle t j =125 o c t j =25 o c t j = 25 o c f = 1.0 mhz vsig = 50mvp-p MURF1020CTR murf1040ctr murf1060ctr ? MURF1020CTR thru murf1060ctr ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2
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